按一下以編輯母片,第二層,第三層,第四層,第五層,*,按一下以編輯母片,第二層,第三層,第四層,第五層,*,各种半导体,LED,湿法清洗机,苏州晶洲装备科技施利君,DF PE,各种半导体LED湿法清洗机苏州晶洲装备科技施利君DF PE,Batch type:,Conventional type,Cassette type,Cassette less type,Single bath type,Single wafer type:,Scrubber,SEZ,Wet bench type,Batch type:Wet bench type,Wet bench bath configuration,SC1,DI,HF,DI,SC2,DI,DI,DRY,Pre Furnace Clean,SC1:Standard Clean 1,SC2:Standard Clean 2,HF:Hydrofluoric Acid,DI:De Ionized Water,Lot Flow,Wet bench bath configurationSC,Typical Wet Clean Bath,P,Heat Exchanger,filter,pump,Process bath,Measurement tank,Typical Wet Clean BathP Heat E,Particle pattern defect,Metal contamination Junction leak,Organic contamination gate oxide leak,Native oxide gate oxide leak,Micro Roughnesss gate oxide leak,The contamination and Its influence,(,沾污及其影响）,Particle,SC:standard clean,RCA:A company name,DIW:de ionized water,SC-1(RCA1/APM:NH,4,OH:H,2,O,2,:DIW),SC-2(RCA2/HPM:HCl:H,2,O,2,:DIW),CARO(SPM/Piranha:H,2,SO,4,:H,2,O,2,),H,3,PO,4,(H,3,PO,4,:DIW),B,OE(Buffer oxide etch HF:NH,4,F)with surfactant,（表面活性剂）,DHF(Dilute HF),Dry System(Spin Dry/IPA Vapor Dry/Marangoni Dry),Key word,SC:standard clean,RCA:A com,SC1(MS)light organic&particle remove,DHF Remove chemical oxide or native OX,SC2 Removal of metals impurities,BOE:Remove oxide with PR,HF/HNO3 Remove poly film.,SPM(H2SO4:H2O2)Photo resist and metals ions,H3PO4 Nitride remove,49%HF remove nitride and thick oxide,Chemical application,SC1(MS)light organic&p,SC1,SC1,Typical Ratio:NH4OH:H2O2:DI=1:1:5-1:2:50,Temp:40,80 C,Mechanism:Solution oxidize surface organics and dissolves,soluble complexes formed.,PH is high,Low stability of metal impurities,NH4OH Dissolves SiO2 and etches Si,H2O2 Oxidizer,forms layer of chemical oxide,Deposition of some species of metals on oxide (e.g.Fe,Ca),Typical Ratio:NH4OH:H2O2:,各种半导体LED湿法清洗机课件,Relationship of Zeta Potentials and pH Value,Relationship of Zeta Potential,SC2,SC2,Typical ratio:Hcl:H2O2:DI=1:1:5 1:1:50,Temp:Typical 80c,Purpose:Remove metallic impurities from wafers,Mechanism,（机制）,:Low PH improves solubility of metallic impurities,（低的,PH,值可以提高金属杂质的溶解度）,Metallic chlorides formed(Metals like Fe,Ca can be removed),（形成金属氯化物）,H2O2 forms chemical oxide(Affect Oxide quality),Typical ratio:Hcl:H2O2:DI=,HF,Ratio:100:1-10:1,Temp:Typical 23 25 C,Purpose:Silicon dioxide removalNitride removal(Rare)38%HF,SiO2+6HF,SiF6+2H2O+H2,Hydrophobic,（疏水）,surface produced(Particle sensitive),HFRatio:100:1-10:1,SPM(Caro),SPM(Caro),Main Reactive Compound:H2S2O5 Caros acid,Typical Temp:130 C,Chemical Ratio:H2SO4:H2O2=4:1-6:1,After dry ashing and IMP post clean,Photo resist remove and light organic remove for pre-clean,Main Reactive Compound:H2S2O,Si3N4+H2O 3SiO2+4NH3,H3PO4,为催化剂，,H2O,为主要反应物,Typical Chemical used:Hot H3PO4 acid,Temperature:150 C to 165 C,Major use:Stripping of nitride mask,Etch characteristic:Isotropic,（各向同性刻蚀）,H3PO4,H3PO4,Types of Drying Methods:,Spin Dry,IPA Vapor Dry(Hot IPA),Marangoni Dry(Room Temp IPA),Hot N2+IPA fume Dry,Performance Indices:,Drying Speed,Particle level,Water mark,Metal impurity,Dry technology,Types of Drying Methods:Dry te,Monitor Technique,Particle Count Laser Surface Scanner,Particle in bath Liquid Particle Counter,Metal Contamination TXRF(ICPMS),（全反射,X,荧光）,Etch rate/uniformity Ellipsometer,（偏振光椭圆率测试仪）,(Organic contamination XPS,（,X,光电子能谱仪）,TOF-SIMS),Micro roughness AFM,（原子力显微镜）,Monitor TechniqueParticle Coun,For wet bench,we normally monitor Particle,Etch rate(DHF,H3PO4)and TXRF items.,Particle,1wafer/once/day spec,30pcs,(0.16m),2.Etch rate,1wafer/once/day,TXRF(Total Reflection X-ray Fluorescence),1wafer/once/week use the same wafer as particle test wafer,after particle test,Monitor frequency,For wet bench,we normally mo,Monitor wafer type,1.Particle:,H3PO4 bath use oxide film wafer,others use bare wafer.If Particle count more than 100,need reclaim.,2.Etch rate:,a.DHF,BOE use oxide film wafer(4500A),when film thickness lower than 1000A,need reclaim,b.H3PO4 use Nitride film wafer(1700A),only can use once,then need reclaim.,Monitor wafer type1.P,Etch Rate Data,Etch Rate Data,Chuck Wash/Rinse:,For chuck/robot clean chemical residue,Over Flow:,Normally after HF/BHF/BOE,(hot)Quick Dump Rinse:,clean chemical residue on wafer,Final Rinse:,Added Resist sensor(,水阻值计）,make sure residue remove completely,DIW bath/tank,Chuck Wash/Rinse:DIW bath/tank,MSDS:,Material safety data sheet,Throughput:,WPH(wafer per hour,),Uniformity,：,均匀性,Etching rate:,蚀刻率,(delta thickness/sec),Chemical life time:,化学液活期,General,名词解释,MSDS:General 名词解释,Chemical life count(batch):,化学液批数活期,Replenish(spiking)time:,补充时间,Circulation rate:,循环速率,Measuring tank:,测量槽,Mega sonic cleaning:,超声波清洗,Inline heater:,在线加热器,Chemical life count(batch):,Heater exchanger:,冷热交换器,Pump:,泵，提供循环动力,Filter:,过滤器，吸附化学溶液中的杂质,Loader/unloader:,入货,/,出货装置,BG:back grinding,晶圆背面研磨,PR:photo resist,光阻,Heater exchanger:,Wet bench configuration,Wet bench configuration,process recipe sample,Process PPID:,F040A60H30,Detail recipe:,SPM(0)+HQDR(0)+0.5HF(40)+OF(480)+APM(600)+HC