单击此处编辑母版标题样式,单击此处编辑母版文本样式,第二级,第三级,第四级,第五级,*,Outline,Introduction,I,ntegrated,C,ircuit and Its Application,How is IC made?,一种相移振荡器 1.3 MHz),Ge 衬底，晶体管及电阻、电容全部由Ge制成 (面积约2),集中工艺形成晶体管,黑蜡掩蔽腐蚀形成Tr台面构造,用细导线互连,证明半导体材料不仅可用于制造分,立器件，而且可以制造整个电子电,路,1958.9.12 J.Kilby 研制成功第一个半导体集成电路-“Solid Circuit”,J.Kilby的制造“固体电路”,Kilby,和他,1958,7,24,的设计,Migration of Electronics Manufacturing,From inception,electronic manufacturing has migrated geographically from the,West to the East,:from,the US and Europe,over to Japan,through the Taiwan area,Korea,arriving in the East:,China,and India,.,The shift in wafer production typically lags behind the rest of the supply chain,but China and India are now at the forefront of IC production!,2,3,1,2,3,2023 WW IC Market,China,6%WW Market,Others,$57.80,Japan,$37.80,$57.90,$9.80,21%WW Market,2023 WW IC Market,$40.80,Others,$82.10,$36.50,Japan,$33.00,China,2023 WW IC Market,26%WW Market,Others,$87.44,$46.56,$62.35,Japan,$57.05,China,US$billion,Source:IC insights January 2023,In 2023,Chinas IC consumption reached USD$40.8 billion,overtaking the top spot as the worlds largest regional IC market for the first time.,By 2023,Chinas IC market is estimated to reach USD$124 billion in terms of overall consumption.,China Becomes Worlds Largest IC Market,A Leading Foundry In The World,SMIC Beijing,SMIC Shanghai,SMIC Tianjin,Tianjin,Beijing,Shanghai,Wuhan,Chengdu,Shenzhen,SMIC Assembly&Testing(Chengdu),SMIC Beijing,Wuhan Xinxin,*,Chengdu Cension,*,供给微米的制程技术,IC Industry Business Unit,一条龙的集成代工效劳,Dedicated Full Service Provider,DesignServices,Mask Making,Wafer,Manufacturing,Wafer Probing,Assembly&Final Test,Wafer Bumping,SOP,PLCC,TSOP,QFP,BGA,BGA,Flip Chip,CSP,2023-IC 技术现状,Integration of 10,8,10,10,transistors in a chip.,Clock frequency of more than 3GHz.,Cutoff frequency of 350 GHz for SiGe bipolar,.,Mass production 90nm,Advanced manufacturing 65nm,Manufacturing development 45nm,Process and device R&D 32nm,.,Smallest transistor realized-5nmMOSFET,Outline,Introduction,I,ntegrated,C,ircuit and Its Application,How is IC made?,导体半导体绝缘体,半导体材料特性:,经掺杂后，可藉由电场(电压)、光、温度、压力、磁场等转变或掌握其导电特性。,最广为应用的集成电路芯片材料：,硅(Silicon,Si)。,纯硅导电特性差，可藉掺杂(Doping,将杂质参加硅片中),转变或掌握其导电特性。如何掺杂及掌握杂质在硅片中分,布是半导体重要制程技术之一。,半导体,Semiconductor,分别式电路 Discrete Circuit,ITANIUM MICROPROCESSOR,(1.72 Billion Transistors 90nm 595 mm2),To make wafers,polycrystalline silicon is melted.The melted silicon is used to grow silicon crystals(or ingots)that are sliced into wafers.,首先溶化多晶硅，生成晶柱，然后切割成晶圆。,Raw Material for Wafers,A slice of semiconductor material,processed to have specified electrical characteristics,especially before it is developed into an electronic component or integrated circuit.,晶圆上的小颗粒，经过处理后具有特殊电性用途。,Semiconductor Glossary,半导体术语表,Die,晶粒,Assembled semiconductor electronic component.,切割封装好的半导体电子元件。,Chip,晶片、芯片,A small,thin,circular slice of a semiconductor material,such as Silicon,on which repeated integrated circuits can be formed.,半导体物质,(,如纯硅,),小薄圆片，在上面可以形成一个个完整电路,Wafer,晶圆,Silicon Technology,矽(硅),技术,6,吋(15.24,cm),8,吋(20.32,cm),12,吋(30.48,cm),1.78,倍,2.25,倍,(A)Production Capability(生产力量),(B)Design Capability(设计力量),元件縮小,0.18 um(,微米),0.13 um(,微米),1 um(微米),=百万分之一米m),=头发的 分之一,头发,的 分之一,千,万,芯片分类及应用Types of ICs&Applications,应用领域,Applications,应用领域,应用领域,Some types of ICs,芯片分类,DRAM,动态随机存储器,MPUs,微处理器,Computer,电脑,ASIC,特定用途集成电路,DSPs,数字信号处理器,Consumer,消费,Flash,闪存存储器,EEPROMs,电可擦除只读存储器,Communi-cation,通讯,Electronic Package,First level package,(Single-chip module),First level package,(Multi-chip module),Second level package,(PCB or card),Third level package,(Mother board),Outline,Introduction,I,ntegrated,C,ircuit and Its Application,How is IC made?,Building an IC Chip,Tape-out(used to be a lot of informationput on tape),Like a blueprint for wafer production,Hierarchy of IC Chip,Multilevel Metallization,M1,Contact,Via 1,M2,Via 2,M3,Via 3,M4,IMD3,ILD,IMD1,IMD2,Backend process,Frontend,Active,Area,Diffusion Barrier/,Adhesion Promoter,Plug,电晶体,(,晶体管,),MOSFET:Metal-Oxide-Semiconductor Field-Effect Transistor,连接线,晶圆芯片制作概述,Wafer Manufacturing Overview,晶柱,Silicon Ingot,芯片,Wafer,光罩制作,/,光刻,离子植入,切割、封装,电镀,(Die,晶粒,),(Chip,晶芯,),蚀刻,Mask Making/Photolithography,Ion Implantation,Assembly&Testing,Electroplating,Etching,沉积,Deposition,PHOTO(,黃光),Module,Process Procedures(制程步骤):,(a)PR_coating(上光 阻)光阻见白光即反响 用黄光,(b)Photo_mask&exposure(上光罩及曝光),(c)CD measurement(曝光后量测)简称 ADI_CD,(d)After Develop Inspection(曝光后检查)简称 ADI,PR:,P,hoto,R,esist,(,光 阻),(,化学,物品),CD:,C,ritical,D,imension,(,重要尺寸),Mask(,光罩),特殊光线,曝光,区,光 阻,光 阻,光 阻,(1)大小或,宽度,是否,OK?,(ADI_CD),(2),光阻是否,曝,开,?,(,ADI),PHOTO(,黄光,),Module,光阻,区,(,PR),ADI_CD,ADI_CD,光阻,区,(,PR),ETCH(,蚀刻,),Module,Process Procedures(制程步骤):,(a)Dry Etching(气相蚀刻)化学反响后成气体去除,(b)WET_PR_stripping(光阻去除,硫酸槽),(c)CD measurement(蚀刻后量測)简称AEI_CD,(d)After Etch Inspection(蚀刻后检查)简称 AEI,光 阻,光 阻,Etching gas,(,蚀刻气体,),光阻去除,(,WET),大小或,宽度,是否,OK?,(AEI_CD),光阻同,时会被吃掉一些,Thin-Film,(,薄膜,),Module,Process Procedures(,制程步骤,):,(,a)Thin film deposition,(,薄膜,沉积,单,片),(b),Thickness measurement(,沉积,厚度,量測),(c)Film types(,薄膜