单击此处编辑母版标题样式,单击此处编辑母版文本样式,第二级,第三级,第四级,第五级,2021-01-10,*,#,集成电路工艺和版图设计,概述,Jian FangIC Design Center,UESTC,集成电路工艺和版图设计概述Jian FangIC,1,IC常用术语,园片：硅片,芯片(Chip,Die)：,6,、8,：硅（园）片直径：1,25.4mm,6,150mm;,8,200mm;,12,300mm;,亚微米1m的设计规范,深亚微米 0,反型层 沟道,源（Source）S,漏（Drain）D,栅（Gate）G,栅氧化层厚度：,50埃1000埃（5nm100n,m）,V,T,阈值电压,电压控制,N沟MOS（NMOS）,P型衬底，受主杂质；,栅上加正电压，表面吸引电子，反型，电子通道；,漏加正电压，电子从源区经N沟道到达漏区，器件开通,。,P衬底n+n+漏源栅栅氧化层氧化层沟道GDSVTVGSID,6,N衬底,p,+,p,+,漏,源,栅,栅氧化层,场氧化层,沟道,P沟MOS（PMOS）,G,D,S,V,T,V,GS,I,D,+,-,V,DS,0,N型衬底，施主杂质，电子导电；,栅上加负电压，表面吸引空穴，反型，空穴通道；,漏加负电压，空穴从源区经P沟道到达漏区，器件开通,。,N衬底p+p+漏源栅栅氧化层场氧化层沟道P沟MOS（PMO,7,CMOS,CMOS：,Complementary Symmetry Metal Oxide Semiconductor,互补对称金属氧化物半导体特点：低功耗,V,SS,V,DD,V,o,V,i,CMOS倒相器,PMOS,NMOS,I/O,I/O,V,DD,V,SS,C,C,CMOS传输门,CMOS CMOS：Complementary Symme,8,N-Si,P,+,P,+,n,+,n,+,P-阱,D,D,V,o,V,G,V,SS,S,S,V,DD,CMOS倒相器截面图,CMOS倒相器版图,N-SiP+P+n+n+P-阱DDVoVGVSSSSVDDC,9,pwell,active,poly,N+implant,P+implant,omicontact,metal,A NMOS Example,pwellactivepolyN+implantP+im,10,pwell,Pwell,Active,Poly,N+implant,P+implant,Omicontact,Metal,pwellPwell,11,Ntype Si,SiO,2,光刻胶,光,MASK Pwell,Ntype SiSiO2光刻胶光MASK Pwell,12,Ntype Si,SiO,2,光刻胶,光刻胶,MASK Pwell,Ntype SiSiO2光刻胶光刻胶MASK Pwe,13,Ntype Si,SiO,2,光刻胶,光刻胶,SiO,2,Ntype SiSiO2光刻胶光刻胶SiO2,14,Ntype Si,SiO,2,SiO,2,Pwell,Ntype SiSiO2SiO2Pwell,15,pwell,active,Pwell,Active,Poly,N+implant,P+implant,Omicontact,Metal,pwellactivePwell,16,Ntype Si,SiO,2,Pwell,SiO,2,光刻胶,MASK active,MASK Active,Si,3,N,4,Ntype SiSiO2PwellSiO2光刻胶MAS,17,Ntype Si,SiO,2,Pwell,SiO,2,光刻胶,光刻胶,MASK active,MASK Active,Si,3,N,4,Ntype SiSiO2PwellSiO2光刻胶光刻胶,18,Ntype Si,SiO,2,Pwell,SiO,2,光刻胶,光刻胶,Si,3,N,4,Ntype SiSiO2PwellSiO2光刻胶光刻胶,19,Ntype Si,SiO,2,Pwell,SiO,2,场氧,场氧,场氧,Pwell,Si,3,N,4,Ntype SiSiO2PwellSiO2场氧场氧场氧,20,Ntype Si,SiO,2,Pwell,场氧,场氧,场氧,Pwell,Ntype SiSiO2Pwell场氧场氧场氧Pwel,21,Ntype Si,SiO,2,Pwell,SiO,2,场氧,场氧,场氧,Pwell,poly,Ntype SiSiO2PwellSiO2场氧场氧场氧,22,active,pwell,poly,Pwell,Active,Poly,N+implant,P+implant,Omicontact,Metal,activepwellpolyPwell,23,Ntype Si,SiO,2,Pwell,SiO,2,MASK poly,场氧,场氧,场氧,Pwell,poly,光刻胶,Ntype SiSiO2PwellSiO2MASK p,24,Ntype Si,SiO,2,Pwell,SiO,2,MASK poly,场氧,场氧,场氧,Pwell,光刻胶,poly,Ntype SiSiO2PwellSiO2MASK p,25,Ntype Si,SiO,2,Pwell,SiO,2,场氧,场氧,场氧,Pwell,poly,Ntype SiSiO2PwellSiO2场氧场氧场氧,26,Ntype Si,SiO,2,Pwell,SiO,2,场氧,场氧,场氧,Pwell,poly,Ntype SiSiO2PwellSiO2场氧场氧场氧,27,active,pwell,poly,N+implant,Pwell,Active,Poly,N+implant,P+implant,Omicontact,Metal,activepwellpolyN+implantPwell,28,Ntype Si,SiO,2,Pwell,SiO,2,MASK N+,场氧,场氧,场氧,Pwell,poly,光刻胶,Ntype SiSiO2PwellSiO2MASK,29,Ntype Si,SiO,2,Pwell,SiO,2,场氧,场氧,场氧,Pwell,光刻胶,poly,N+implant,S/D,Ntype SiSiO2PwellSiO2场氧场氧场氧,30,active,pwell,poly,P+implant,Pwell,Active,Poly,N+implant,P+implant,Omicontact,Metal,activepwellpolyP+implantPwell,31,Ntype Si,SiO,2,Pwell,SiO,2,MASK N+,场氧,场氧,场氧,Pwell,poly,光刻胶,光,S/D,Ntype SiSiO2PwellSiO2MASK,32,铸造辉煌，唯有质量。,11月-24,11月-24,Tuesday,November 19,2024,防护加警惕保安全无知加大意必危险。,23:30:35,23:30:35,23:30,11/19/2024 11:30:35 PM,智者防患于前，愚者灭灾于后。,11月-24,23:30:35,23:30,Nov-24,19-Nov-24,清扫给油照基准，设备精度合标准。,23:30:35,23:30:35,23:30,Tuesday,November 19,2024,光靠记忆不可靠，标准作业最重要。,11月-24,11月-24,23:30:35,23:30:35,November 19,2024,计划是时间的最好保障，时间是效率的坚实基础，效率是行动的优化大师，行动是成功的唯一途径。,2024年11月19日,11:30 下午,11月-24,11月-24,只怕不改善，不怕改善少。,19 十一月 2024,11:30:35 下午,23:30:35,11月-24,时时注意安全，处处排除隐患。,十一月 24,11:30 下午,11月-24,23:30,November 19,2024,手牵手发扬优质精神。,2024/11/19 23:30:35,23:30:35,19 November 2024,有一分耕耘，就有一分收获。,11:30:35 下午,11:30 下午,23:30:35,11月-24,全员齐动，风起云涌，每日拜访，铭记心中。,11月-24,11月-24,23:30,23:30:35,23:30:35,Nov-24,时时寻求效率进步，事事讲究方法技术。,2024/11/19 23:30:35,Tuesday,November 19,2024,分析原因要认真解决问题要彻底。,11月-24,2024/11/19 23:30:35,11月-24,谢谢大家！,铸造辉煌，唯有质量。9月-239月-23Thursday,33,